Emission from rare-earth centers in (ZnTe:Yb):O/GaAs

被引：3
|
作者：
Konnov, VM [1 ]
Loiko, NN [1 ]
Sadof'ev, YG [1 ]
Trushin, AS [1 ]
Makhov, EI [1 ]
机构：
[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 117924, Russia
来源：
SEMICONDUCTORS | 2002年 / 36卷 / 11期
基金：
俄罗斯基础研究基金会;
关键词：
GaAs; Magnetic Material; Electromagnetism; Crystal Field; ZnTe;
D O I：
10.1134/1.1521218
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Layers of Yb-doped ZnTe were grown by molecular-beam epitaxy, and the photoluminescence of ZnTe:Yb structures was studied. It was found that additional doping with O should be performed to activate emission from Yb ions. The necessary conditions for intense emission from Yb3+ ions were determined. Stark splitting of levels of Yb3+ ions in the crystal field was measured experimentally. (C) 2002 MAIK "Nauka / Interperiodica".
引用
收藏
页码：1215 / 1220
页数：6
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