Epitaxial growth of single-crystalline AIN films on tungsten substrates

被引:31
作者
Li, Guoqiang
Kim, Tae-Won
Inoue, Shigeru
Okamoto, Koichiro
Fujioka, Hiroshi
机构
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
[2] Kanagawa Acad Sci & Technol, Kawasaki, Kanagawa 2130012, Japan
关键词
RESONATORS; DEVICES; LAYER; ALN; GAN;
D O I
10.1063/1.2404588
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors have grown single-crystalline AlN(0001) films on W(110) substrates with an in-plane alignment AlN[11-20] parallel to W[001] at temperatures ranging from 450 to 600 degrees C by pulsed laser deposition. These AlN films have a clear sixfold symmetry without 30 S rotational domains. When AlN films are grown at 450 degrees C, the interfacial reaction between AlN and W (110) is fully suppressed and a flat surface with a root-mean-square value as low as 0.20 nm for AlN films is obtained. These single-crystalline AlN films grown on W (110) open a good opportunity for the high performance film bulk acoustic wave resonators of the next generation. (c) 2006 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 10 条
[1]   METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].
AMANO, H ;
SAWAKI, N ;
AKASAKI, I ;
TOYODA, Y .
APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355
[2]   Room-temperature epitaxial growth of GaN on lattice-matched ZrB2 substrates by pulsed-laser deposition -: art. no. 221907 [J].
Kawaguchi, Y ;
Ohta, J ;
Kobayashi, A ;
Fujioka, H .
APPLIED PHYSICS LETTERS, 2005, 87 (22) :1-3
[3]   ACOUSTIC BULK WAVE COMPOSITE RESONATORS [J].
LAKIN, KM ;
WANG, JS .
APPLIED PHYSICS LETTERS, 1981, 38 (03) :125-127
[4]   Influence of electrode configurations on the quality factor and piezoelectric coupling constant of solidly mounted bulk acoustic wave resonators [J].
Lee, SH ;
Yoon, KH ;
Lee, JK .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (07) :4062-4069
[5]   Room-temperature epitaxial growth of GaN on atomically flat MgAl2O4 substrates by pulsed-laser deposition [J].
Li, Guoqiang ;
Ohta, Jitsuo ;
Okamoto, Koichiro ;
Kobayashi, Atsushi ;
Fujioka, Hiroshi .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (17-19) :L457-L459
[6]   Room-temperature epitaxial growth of AlN films [J].
Ohta, J ;
Fujioka, H ;
Ito, S ;
Oshima, M .
APPLIED PHYSICS LETTERS, 2002, 81 (13) :2373-2375
[7]   NItride-based semiconductors for blue and green light-emitting devices [J].
Ponce, FA ;
Bour, DP .
NATURE, 1997, 386 (6623) :351-359
[8]   THE INTRINSIC THERMAL-CONDUCTIVITY OF ALN [J].
SLACK, GA ;
TANZILLI, RA ;
POHL, RO ;
VANDERSANDE, JW .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1987, 48 (07) :641-647
[9]   Highly c-axis oriented thin AIN films deposited on gold seed layer for FBAR devices [J].
Tay, KW ;
Huang, CL ;
Wu, L .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (04) :1474-1479
[10]   OPTICAL-PROPERTIES OF AIN EPITAXIAL THIN-FILMS IN THE VACUUM ULTRAVIOLET REGION [J].
YAMASHITA, H ;
FUKUI, K ;
MISAWA, S ;
YOSHIDA, S .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :896-898