Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers

被引：20
作者：
Kuo, C. H. [1 ]
Chen, C. M.
Kuo, C. W.
Tun, C. J.
Pan, C. J.
Pong, B. J.
Chi, G. C.
机构：
[1] Natl Cent Univ, Dept Opt & Photon, Chungli 320, Taiwan
[2] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan
[3] Natl Cent Univ, Dept Phys, Chungli 320, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 20期
关键词：
D O I：
10.1063/1.2387941
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors have demonstrated nitride-based near-ultraviolet (NUV) light emitting diodes (LEDs) with mesh indium tin oxide (ITO) contact layer. With 20 mA injection current, it was found that forward voltages were 3.94 and 4.05 V while the output powers were 7.54 and 9.02 mW for the planar ITO LED and mesh ITO LED, respectively. The larger LED output power should be attributed partially to the reduced absorption of ITO in the NUV region and partially to the better current spreading. (c) 2006 American Institute of Physics.
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