EXCITON FINE STRUCTURE OF NITROGEN ISOELECTRONIC CENTERS IN GaAs

被引：0

作者：

Harada, Yukihiro ^{[1
]}

Kita, Takashi ^{[1
]}

Wada, Osamu ^{[1
]}

机构：

[1] Kobe Univ, Dept Elect & Elect Engn, Grad Sch Engn, Nada Ku, Kobe, Hyogo 6578501, Japan

来源：

2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年

关键词：

isoelectronic trap; nitrogen impurity; exciton fine structure; exchange interaction;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the exciton fine structures of nitrogen isoelectronic centers in GaAs. Atomically controlled nitrogen doping into GaAs realizes a series of distinct, strong, narrow bandwidth bound-exciton luminescences. The exciton fine structure has been found to consist of four signals, which can be selected by the linear polarization. Our calculations have succeeded in reproducing the optical selection characteristics when considering both the J-J coupling and local-field effects in the C(2 nu) symmetry.

引用

页码：231 / 233

页数：3