Influence of nitridation process on characteristics of N-polar AlGaN films grown by MOCVD

被引：9

作者：

Wang, Xiaolei ^{[1
]}

Zhang, Xiong ^{[1
]}

Zhang, Heng ^{[1
]}

Zhao, Jianguo ^{[1
]}

Wu, Zili ^{[1
]}

Dai, Qian ^{[1
]}

Wang, Shuchang ^{[2
]}

Hu, Guohua ^{[1
]}

Cui, Yiping ^{[1
]}

机构：

[1] Southeast Univ, Adv Photon Ctr, Nanjing 210096, Jiangsu, Peoples R China

[2] Changshu Inst Technol, Coll Phys & Elect Engn, Changshu 215500, Jiangsu, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2017年 / 64卷

关键词：

N-polar AlGaN epi-layers; Nitridation process; Crystalline quality; Surface morphology; Photoluminescence; IMPURITY INCORPORATION; SAPPHIRE SUBSTRATE; GAN; DEPENDENCE; SURFACE; FACE;

D O I：

10.1016/j.mssp.2017.03.025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The N-polar AlGaN epi-layers with an Al composition of similar to 10% were grown on (0001)-oriented c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD) technology. Special attention was paid on the nitridation process in the epitaxial growth of N-polar AlGaN films. The optical microscope (OM) measurement results demonstrated that the size of hexagonal defects on the surface of N-polar AlGaN epi-layer decreased dramatically with our improved nitridation process. Furthermore, the structural, electrical, and optical properties of N-polar AlGaN epi-layers were characterized extensively by means of X-ray rocking curves (XRCs), Hall effect, and photoluminescence (PL) spectroscopy. It was found that the defects-related blue-band (BB) emission was greatly suppressed and the threading dislocation (TD) density was significantly reduced by the optimized nitridation process. These characterization results reveal that the reformed nitridation process plays a vital role in the improvement in the crystalline quality as well as the electrical and optical properties of the N-polar AlGaN epi-layers.

引用

页码：147 / 151

页数：5

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