Photoluminescence properties of Pb1-xSnxTe/CdTe quantum wells grown on (100)-oriented GaAs substrates by molecular beam epitaxy

被引：6

作者：

Koike, Kazuto ^{[1
]}

Hotei, Takanori ^{[1
]}

Kawaguchi, Ryou ^{[1
]}

Yano, Mitsuaki ^{[1
]}

机构：

[1] Osaka Inst Technol, Nanomat Microdevices Res Ctr, Osaka 5358585, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 07期

关键词：

Quantum dots; Molecular beam epitaxy; Quantum wells; Semiconducting lead compounds; Semiconducting ternary compounds; Photoluminescence; LAYERS; PBTE;

D O I：

10.1016/j.jcrysgro.2008.10.112

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper describes photoluminescence (PL) properties of Pb1-xSnxTe/CdTe quantum wells (QWs) grown on (1 0 0)-oriented GaAs substrates by molecular beam epitaxy. Despite the difference in crystal structure between these two tellurides, two-dimensional QWs with an abrupt heterointerface were formed at a low growth temperature of 220 degrees C. Highly efficient midinfrared PL was observed from the QWs even at room temperature. Control of the Sn content in QWs allowed tuning of the PL peak energy in a wide range of a 3-5 mu m atmospheric window. Considering effects of both the strain-induced band deformation and the quantum confinement in QWs, the transition energy observed was found to agree well with theoretical calculation. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2102 / 2105

页数：4

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