Quantum fluctuations in atomistic semiconductor devices

被引：6

作者：

Barker, JR ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Nanoelectr Res Ctr, Glasgow G12 8LT, Lanark, Scotland

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2003年 / 34卷 / 3-6期

关键词：

atomistic silicon devices; quantum transport; Green functions;

D O I：

10.1016/j.spmi.2004.03.028

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Atomistic Green function simulations of model 25 nm x 25 nm Si MOSFETs predict strong fluctuation effects derived from mode fluctuations in the quantum transport through the inhomogeneous 2DEG channel caused by the spatial distribution of non-self-averaged discrete dopants. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：361 / 366

页数：6

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