Enhanced diamond nucleation on pretreated silicon substrates

被引：6
|
作者：
Shen, MR [1 ]
Wang, H [1 ]
Ning, ZY [1 ]
Ye, C [1 ]
Gan, ZQ [1 ]
Ren, ZX [1 ]
机构：
[1] ACAD SINICA,INST PLASMA PHYS,HEFEI 230031,PEOPLES R CHINA
来源：
THIN SOLID FILMS | 1997年 / 301卷 / 1-2期
关键词：
carbon; chemical vapour deposition (CVD); diamond; nucleation;
D O I：
10.1016/S0040-6090(96)09594-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The nucleation and growth of diamond on two-step pretreated Si substrates were studied. The diamond films were produced by hot-filament chemical vapor deposition. The two-step pretreatment comprised coating the smooth Si substrate with a thin carbon film by electrolysis of methanol solution, followed by 1 min ultrasonic treatment with diamond powder. An enhanced diamond nucleation density as high as 2 X 10(9) cm(-2) was obtained, three orders of magnitude higher than that on single-step pretreated Si substrates. In addition, rapid diamond nucleation on the pretreated Si substrate was observed. Explanations are given for the experimental results and a scheme of the kinetic process of nucleation is proposed.
引用
收藏
页码：77 / 81
页数：5
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