Ferroelectric and piezoelectric properties of Na0.52K0.48NbO3 thin films prepared by radio frequency magnetron sputtering

被引：66

作者：

Lee, Hai Joon ^{[1
]}

Kim, Ill Won ^{[1
]}

Kim, Jin Soo ^{[4
]}

Ahn, Chang Won ^{[3
]}

Park, Bae Ho ^{[2
]}

机构：

[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[2] Konkuk Univ, Dept Phys, Seoul 143701, South Korea

[3] Korea Basic Sci Inst, High Technol Components & Mat Res Ctr, Pusan 618230, South Korea

[4] Pukyong Natl Univ, Dept Phys, Pusan 680749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 09期

关键词：

atomic force microscopy; dielectric polarisation; ferroelectric coercive field; ferroelectric thin films; leakage currents; permittivity; piezoelectric thin films; potassium compounds; sodium compounds; sputtered coatings; X-ray diffraction; PULSED-LASER DEPOSITION; DIELECTRIC-RELAXATION; NA0.5K0.5NBO3; FILMS; DEVICE APPLICATIONS; BISMUTH-TITANATE; CAPACITORS; CERAMICS; GROWTH;

D O I：

10.1063/1.3095500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric Na0.52K0.48NbO3 (NKN) thin film on Pt/Ti/SiO2/Si substrate was prepared using the radio frequency magnetron sputtering method. The single phase and grain morphologies of NKN were confirmed by x-ray diffraction and atomic force microscopy analysis, respectively. The remnant polarization P-r and coercive electric field E-c of NKN film were 22.5 mu C/cm(2) and 90 kV/cm, respectively. The NKN film displayed low frequency dielectric dispersion in the temperature range 25-500 degrees C. The leakage current density of the film was 3.0x10(-7) A/cm(2) at 100 kV/cm. The piezoelectric constant d(33) was estimated to be 45 pm/V using the piezoelectric force microscopy.

引用

页数：3

共 22 条

[11] Low-frequency dielectric relaxation and ac conduction of SrBi2Ta2O9 thin film grown by pulsed laser deposition [J].