A-plane (1120) InN growth on nitridated R-plane (1012) sapphire by ECR-MBE

被引：31
作者：
Kumagai, Y.
Tsuyuguchi, A.
Naoi, H.
Araki, T.
Na, H.
Nanishi, Y.
机构：
[1] Dept Photon, Kusatsu, Shiga 5258577, Japan
[2] Ritsumeikan Univ, Ctr Promot, COE Program, Shiga 5258577, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2006年 / 243卷 / 07期
关键词：
D O I：
10.1002/pssb.200565383
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A-plane (11 (2) over bar0) InN has been successfully grown on R-plane (10 (1) over bar2) sapphire substrate by electron cyclotron resonance (ECR) plasma-exited molecular beam epitaxy through substrate nitridation process. The substrate nitridation of R-plane sapphire by ECR nitrogen plasma was carried out at 430 degrees C for 10 and 15 min. The results of reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and scanning electron microscopy indicated the formation of A-plane InN on R-plane sapphire. Inclusion of cubic InN was also observed together with A-plane InN through RHEED and XRD measurements in case of A-plane InN layer grown on 10 min nitridated substrate. However, when the nitridation time of R-plane sapphire by ECR nitrogen plasma increased to 15 min, it is confirmed that formation of cubic InN was successfully suppressed.
引用
收藏
页码：1468 / 1471
页数：4
相关论文
共 13 条
[1]   Growth of cubic InN on r-plane sapphire [J].
Cimalla, V ;
Pezoldt, J ;
Ecke, G ;
Kosiba, R ;
Ambacher, O ;
Spiess, L ;
Teichert, G ;
Lu, H ;
Schaff, WJ .
APPLIED PHYSICS LETTERS, 2003, 83 (17) :3468-3470
[2]  
Davydov VY, 2002, PHYS STATUS SOLIDI B, V229, pR1, DOI 10.1002/1521-3951(200202)229:3<R1::AID-PSSB99991>3.0.CO
[3]  
2-O
[4]   Structural and morphological characteristics of planar (11(2)over-bar0) a-plane gallium nitride grown by hydride vapor phase epitaxy [J].
Haskell, BA ;
Wu, F ;
Matsuda, S ;
Craven, MD ;
Fini, PT ;
DenBaars, SP ;
Speck, JS ;
Nakamura, S .
APPLIED PHYSICS LETTERS, 2003, 83 (08) :1554-1556
[5]   Plasma-assisted MBE growth of InN films and InAlN/InN heterostructures [J].
Higashiwaki, M ;
Matsui, T .
JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :494-498
[6]   Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy [J].
Lu, H ;
Schaff, WJ ;
Eastman, LF ;
Wu, J ;
Walukiewicz, W ;
Cimalla, V ;
Ambacher, O .
APPLIED PHYSICS LETTERS, 2003, 83 (06) :1136-1138
[7]   Optical bandgap energy of wurtzite InN [J].
Matsuoka, T ;
Okamoto, H ;
Nakao, M ;
Harima, H ;
Kurimoto, E .
APPLIED PHYSICS LETTERS, 2002, 81 (07) :1246-1248
[8]  
NANISHI Y, 2004, MATER RES SOC S P, V798
[9]  
Saito Y, 2002, PHYS STATUS SOLIDI B, V234, P796, DOI 10.1002/1521-3951(200212)234:3<796::AID-PSSB796>3.0.CO
[10]  
2-H
12