Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector

被引：14

作者：

Jun, L ^{[1
]}

Hang, S ^{[1
]}

Jin, YX ^{[1
]}

Hong, J ^{[1
]}

Miao, GQ ^{[1
]}

Zhao, HF ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130031, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 06期

关键词：

D O I：

10.1088/0268-1242/19/6/005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A resonant-cavity-enhanced (RCE) PIN photodetector has high bandwidth and high sensitivity compared with traditional PIN photodetectors. In this paper, the structure of a RCE GaInAsSb/GaSb photodetector has been designed so that the light is incident from the substrate. The top reflector for this structure is made of 9.5-15.5 periods of InAs/GaSb quarter wave stacks (QWS) and the bottom reflector is composed of three periods of SiO2/Si QWS. An antireflection coating with more than 99% transmissivity is deposited on the substrate surface. A simulation shows that the quantum efficiency could be more than 90% at the operating wavelength 2.4 mum. The device has two spectral response peaks, which could make the device function as a double-colour detector.

引用

页码：690 / 694

页数：5

共 21 条

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