Transverse dielectric properties of boron nitride nanotubes by ab initio electric field calculations

被引:36
|
作者
Lan, Hai-Ping
Ye, Lin-Hui
Zhang, Shuang
Peng, Lian-Mao [1 ]
机构
[1] Peking Univ, Dept Elect, Beijing 100871, Peoples R China
基金
美国国家科学基金会;
关键词
ab initio calculations; boron compounds; density functional theory; electronic structure; III-V semiconductors; nanotubes; permittivity; polarisability; CARBON NANOTUBES; POLARIZABILITIES;
D O I
10.1063/1.3129170
中图分类号
O59 [应用物理学];
学科分类号
摘要
Extensive ab initio finite electric-field calculations are performed to study the static transverse dielectric properties of boron nitride nanotubes via the sawtooth potential approach. It is shown that the transverse polarizability is proportional to the tube radius rather than to the square of it, and that the screening factor is not a constant but decreases monotonically with increasing tube radius. A classical cylindrical dielectric shell model, with a dielectric constant of 5.90 and an effective shell thickness of 2.50 A, is shown to reproduce very well the ab initio results for both single- and multiwalled boron nitride nanotubes.
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页数:3
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