Resist film uniformity in the microlithography process

被引:19
作者
Ho, WK [1 ]
Lee, LL
Tay, A
Schaper, C
机构
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
关键词
D O I
10.1109/TSM.2002.801380
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
With the trends toward smaller feature size, one of the challenge is to control the resist thickness and uniformity to a tight tolerance in order to minimize thin film interference effects on the critical dimensions. In this paper, we propose a new approach to improve resist thickness control and uniformity through the softbake process. Using an array of thickness sensorsi a multizones bakeplate and a sliding mode control algorithm, the temperature distribution of the bakeplate is manipulated in real-time to reduce the resist thickness nonuniformity: The sliding mode control algorithm is implemented in a cascaded control structure so that the bake temperature is constrained. This is to prevent decomposition of the photoactive compound in the resist. We have experimentally demonstrated an improvement in the resist thickness uniformity across individual wafers and from wafer-to-wafer. The cascaded control structure using a sliding mode control algorithm provides a simpler and faster implementation of the thickness control strategy and makes it more suitable for real-time application. There is about 75 times reduction in the computation time and a resist thickness nonuniformity of less than 10 Angstrom is achieved.
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页码:323 / 330
页数:8
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