Frame-transfer CMOS active pixel sensor with pixel pinning

被引：0

作者：

Zhou, ZM ^{[1
]}

Pain, B ^{[1
]}

Fossum, ER ^{[1
]}

机构：

[1] PHOTOBIT, LA CRESCENTA, CA 91214 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 10期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first frame-transfer CMOS active pixel sensor (APS) is reported. The sensor architecture integrates an array of active pixels with an array of passive memory cells. Charge integration amplifier-based readout of the memory cells permits binning of pixels for variable resolution imaging. A 32 x 32 element prototype sensor with 24-mu m pixel pitch was fabricated in 1.2-mu m CMOS and demonstrated.

引用

页码：1764 / 1768

页数：5

共 10 条

[1]

AIZAWA K, 1995, 1995 IEEE WORKSH CCD

[2]

DICKINSON A, 1995, ISSCC DIG TECH PAP I, V38, P226, DOI 10.1109/ISSCC.1995.535533

[3]

Fossum ER, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P17, DOI 10.1109/IEDM.1995.497174

[4] ARCHITECTURES FOR FOCAL PLANE IMAGE-PROCESSING [J].