SELECTIVE METALLIZATION AND PASSIVATION OF DRY-TRANSFERRED CARBON NANOTUBES IN FIELD-EFFECT TRANSISTORS

被引：0

作者：

Jenni, Laura V. ^{[1
]}

Haluska, Miroslav ^{[1
]}

Hierold, Christofer ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Dept Mech & Proc Engn, Chair Micro & Nanosyst, Zurich, Switzerland

来源：

2018 IEEE MICRO ELECTRO MECHANICAL SYSTEMS (MEMS) | 2018年

基金：

瑞士国家科学基金会;

关键词：

ATOMIC LAYER DEPOSITION; FABRICATION; HYSTERESIS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of selective atomic layer deposition (ALD) of platinum and alumina was investigated for top clamping and passivation of contacts of suspended pristine single-walled carbon nanotubes (SWNTs). This wet-chemical-free process offers an interesting alternative to lithography-based methods as it avoids degradation of the transfer characteristics by resist residues or amorphous carbon deposition on the carbon nanotubes (CNTs) in field-effect transistor (FET) configuration. It was observed that the annealing and clamping effect can be used not only to obtain lower contact resistances and higher signal to noise ratio (SNR), but also to induce, what appears to be, band gap opening in metallic nanotubes. On average, a current increase of more than one order of magnitude and SNRs as high as 200 could be observed for metallized and passivated small-gap semiconducting CNTs.

引用

页码：479 / 482

页数：4

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