Oxide semiconductors with ultra-wide band gap

被引：1
|
作者：
Grundmann, Marius [1 ]
机构：
[1] Univ Leipzig, Felix Bloch Inst Festkorperphys, Linnestr 5, D-04103 Leipzig, Germany
来源：
VAKUUM IN FORSCHUNG UND PRAXIS | 2020年 / 32卷 / 06期
关键词：
PULSED-LASER DEPOSITION;
D O I：
10.1002/vipr.202000747
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
Pulsed laser deposition (PLD) is a comparatively simple physical, vacuum-based method for producing thin films. Here, different aspects of the deposition of oxide alblides are investigated, especially for the (Al,Ga,In)(2)O-3 system with a very large band gap. The method of combinatorial PLD for a lateral concentration gradient (CCS-PLD, continuous composition spread PLD) allows a simple representation of alloy series. In combination with subsequent spatially resolved methods for structural, electrical and optical characterization, an efficient and systematic investigation of the physical properties of the alloy semiconductors results.
引用
收藏
页码：32 / 37
页数：6
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