Computer simulation of (n, p) modifications in silicon nitride (Si3N4) nanoparticles

被引:29
作者
Naghiyev, T. G. [1 ,2 ,3 ]
机构
[1] Natl Acad Sci, Inst Phys Azerbaijan, AZ-1143 Baku, Azerbaijan
[2] Natl Ctr Nucl Res, Dept Nanotechnol & Radiat Mat Sci, AZ-1073 Baku, Azerbaijan
[3] Azerbaijan State Econ Univ, Composite Mat Sci Res Ctr, Dept Chem & Phys, AZ-1063 Baku, Azerbaijan
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2020年 / 34卷 / 32期
关键词
Nano Si3N4; (n; p) transmutations; effective cross-section; neutron flux; NEUTRON-IRRADIATION; EU2+;
D O I
10.1142/S021797922050318X
中图分类号
O59 [应用物理学];
学科分类号
摘要
(n, p) transmutations in the silicon nitride (Si3N4) nanoparticles by the neutrons at different energies have been studied by computer simulation. The transmutations by neutrons in the nanomaterial were separately investigated for silicon and nitrogen atoms in the Si3N4 particles. Since the effective cross-section of the possible probability of transmutation is different in the various types of silicon and nitrogen atoms, the modeling was performed separately for each stable isotope. The spectra of the effective cross-sections of the (n, p) transmutations for silicon and nitrogen atoms have been studied in relation to each other.
引用
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页数:6
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