Investigation of ferroelectricity in ultrathin PbTiO3 films

被引：7

作者：

Lichtensteiger, C ^{[1
]}

Triscone, JM ^{[1
]}

机构：

[1] Univ Geneva, DPMC, CH-1211 Geneva 4, Switzerland

来源：

INTEGRATED FERROELECTRICS | 2004年 / 61卷

关键词：

ferroelectricity; ultrathin perovskite films; oxide epitaxial growth;

D O I：

10.1080/10584580490459062

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using off-axis magnetron sputtering onto metallic Nb-SrTiO3 substrates, we have grown a series of epitaxial c-axis oriented PbTiO3 perovskite films with thicknesses ranging from 460 Angstrom down to 12 Angstrom (about 3 unit cells). Topographic measurements using atomic force microscopy showed that these films are essentially atomically smooth. X-ray measurements allowed us to precisely determine the thickness of the films and the c-axis lattice parameter value, and to confirm epitaxial growth. It is found that the c-axis lattice parameter systematically decreases with decreasing film thickness.

引用

页码：143 / 148

页数：6

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