Investigation of ferroelectricity in ultrathin PbTiO3 films

被引:7
作者
Lichtensteiger, C [1 ]
Triscone, JM [1 ]
机构
[1] Univ Geneva, DPMC, CH-1211 Geneva 4, Switzerland
关键词
ferroelectricity; ultrathin perovskite films; oxide epitaxial growth;
D O I
10.1080/10584580490459062
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using off-axis magnetron sputtering onto metallic Nb-SrTiO3 substrates, we have grown a series of epitaxial c-axis oriented PbTiO3 perovskite films with thicknesses ranging from 460 Angstrom down to 12 Angstrom (about 3 unit cells). Topographic measurements using atomic force microscopy showed that these films are essentially atomically smooth. X-ray measurements allowed us to precisely determine the thickness of the films and the c-axis lattice parameter value, and to confirm epitaxial growth. It is found that the c-axis lattice parameter systematically decreases with decreasing film thickness.
引用
收藏
页码:143 / 148
页数:6
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