A power IC technology with excellent cross-talk isolation

被引：10

作者：

Chan, WWT

Sin, JKO

Mok, PKT

Wong, SS

机构：

[1] Dept. of Elec. and Electron. Eng., Hong Kong Univ. of Sci. and Technol., Clear Water Bay

[2] Stanford University, Stanford

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 10期

关键词：

D O I：

10.1109/55.537077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports a low-cost, excellent cross-talk isolation power integrated circuit (PIC) technology capable of integrating high-voltage LDR MOS, high-voltage LIGBT, and low-voltage CMOS control circuit. The technology is implemented using a conventional twin-well CMOS process with no compromise on the CMOS devices, and the breakdown voltages of the LDMOS and LIGBT with drift length of 40 mu m are over 400 V. Using this technology, operating current of the body diode of the LDMOS can be improved by over 16 times and operating current of the LIGBT can be improved by over five times before CMOS Latch-up in the control circuit occurs.

引用

页码：467 / 469

页数：3

共 9 条

[1] APPLICATION OF A FLOATING WELL CONCEPT TO A LATCH-UP-FREE, LOW-COST, SMART POWER HIGH-SIDE SWITCH TECHNOLOGY [J].

BAFLEUR, M ;

BUXO, J ;

VIDAL, MP ;

GIVELIN, P ;

MACARY, V ;

SARRABAYROUSE, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (07) :1340-1342

[2]

Chan WWT, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P971, DOI 10.1109/IEDM.1995.499378

[3] INTERACTION BETWEEN MONOLITHIC, JUNCTION-ISOLATED LATERAL INSULATED-GATE BIPOLAR-TRANSISTORS [J].

CHOW, TP ;

PATTANAYAK, DN ;

BALIGA, BJ ;

ADLER, MS ;

HENNESSY, WA ;

LOGAN, CE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (02) :310-315

[4]

Disney D. R., 1993, Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs ISPSD '93 (Cat. No.93CH3314-2), P254, DOI 10.1109/ISPSD.1993.297132

[5] THE INFLUENCE OF AN LIGBT ON CMOS LATCH-UP IN POWER INTEGRATED-CIRCUIT [J].