Implementation of the ArF resists based on VEMA for sub-100 nm device

被引：2

作者：

Kim, HW ^{[1
]}

Lee, S ^{[1
]}

Choi, SJ ^{[1
]}

Lee, SH ^{[1
]}

Kang, Y ^{[1
]}

Woo, SG ^{[1
]}

Nam, D ^{[1
]}

Chae, YS ^{[1
]}

Kim, J ^{[1
]}

Moon, JT ^{[1
]}

Kavanagh, R ^{[1
]}

Barclay, G ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin Si, Gyungki Do, South Korea

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIX, PTS 1 AND 2 | 2002年 / 4690卷

关键词：

photoresist; chemically amplified resist; ArF; lithography; VEMA;

D O I：

10.1117/12.474253

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is expected that ArF lithography will be introduced for device manufacturing for sub-100 nm nodes, as high NA ArF step and scan systems (NA=0.75) become available. We previously reported on a platform, based on a vinyl ether-maleic anhydride (VEMA) alternating polymer system. This platform demonstrated both good resolution and high dry etch resistance in comparison to other platforms based on acrylate and cyclic-olefin-maleic anhydride (COMA) polymer systems. The VEMA platform has been continuously improved to meet the increasing requirements, such as resolution, depth of focus (DOF), iso-dense bias, and post-etch roughness for real device manufacturing. This VEMA system is being implemented for sub-100 nm device with high NA (NA=0.75) ArF exposure systems. In this paper, recent experimental results are reviewed.

引用

页码：533 / 540

页数：8

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