Improvement in microwave dielectric properties of La(Mg0.5Sn0.5)O3 ceramics by applying ZnO-B2O3-SiO2

被引：6

作者：

Chen, Yih-Chien ^{[1
]}

Li, Chih-Hung ^{[1
]}

机构：

[1] Lunghwa Univ Sci & Technol, Dept Elect Engn, Gueishan Shiang, Taoyuan County, Taiwan

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2014年 / 25卷 / 10期

关键词：

SINTERING TEMPERATURE; ND(MG0.5SN0.5)O-3 CERAMICS; FREQUENCIES; TIME;

D O I：

10.1007/s10854-014-2167-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The microwave dielectric properties of ZnO-B2O3-SiO2 (ZBS)-doped La(Mg0.5Sn0.5)O-3 ceramics were investigated with a view to their application in microwave devices. ZBS-doped La(Mg0.5Sn0.5)O-3 ceramics were prepared by the conventional solid-state method. The X-ray diffraction patterns of ZBS-doped La(Mg0.5Sn0.5)O-3 ceramics exhibited no significant variation of phase with sintering temperature. By adding 2.0 wt% ZBS, a dielectric constant of 19.14, a quality factor (Q x f) of 35,800 GHz, and a temperature coefficient of resonant frequency tau (f) (-86 ppm/A degrees C) were obtained when La(Mg0.5Sn0.5)O-3 ceramics were sintered at 1,400 A degrees C for 4 h.

引用

页码：4312 / 4318

页数：7

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