Optical characteristics of photosensitive Ge-doped SiO2 planar waveguides implanted with protons at 800°C

被引：0

作者：

Hughes, PJ ^{[1
]}

Knights, AP

Weiss, BL

Ojha, S

机构：

[1] Univ Surrey, Sch Elect Engn Informat & Math, Guildford GU2 5XH, Surrey, England

[2] NORTEL Technol, Harlow CM17 9NA, Essex, England

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 05期

关键词：

D O I：

10.1049/el:20000367

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An experimental study of the absorption, refractive index and UV photosensitivity of proton implanted Ge-doped planar glass waveguides has shown that the defects induced by implantation at 800 degrees C were photobleached after UV exposure and that self-annealing occurred.

引用

页码：427 / 428

页数：2

共 9 条

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