Growth and properties of CuInS2 single crystals

被引：4
|
作者：
Bodnar, IV [1 ]
机构：
[1] Belarussian State Univ Informat Sci & Radio Engn, Minsk 220072, BELARUS
来源：
INORGANIC MATERIALS | 2000年 / 36卷 / 02期
关键词：
D O I：
10.1007/BF02758006
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
CnInS(2) single crystals 14-16 mm in diameter and up to 40 mm in length were: grown by the traveling solvent method. The crystals were found to be n-type, with a conductivity of 0.1-10 S/cm, carrier concentration of 10(16)-10(17) cm(-3), and carrier mobility of 150-220 cm(2)/(Vs). The anisotropic thermal expansion of the crystals was measured.
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页码：108 / 110
页数：3
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