A low-cost and eco-friendly Br-doped Cu7Sn3S10 thermoelectric compound with zT around unity

被引：28

作者：

Deng, Tingting ^{[1
,2
,3
]}

Qiu, Pengfei ^{[1
]}

Xing, Tong ^{[1
]}

Zhou, Zhengyang ^{[1
]}

Wei, Tian-Ran ^{[4
]}

Ren, Dudi ^{[1
]}

Xiao, Jie ^{[1
]}

Shi, Xun ^{[1
,2
]}

Chen, Lidong ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[3] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China

[4] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY A | 2021年 / 9卷 / 12期

基金：

中国国家自然科学基金;

关键词：

THERMAL-CONDUCTIVITY; CRYSTAL-STRUCTURE; PERFORMANCE;

D O I：

10.1039/d0ta12042a

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cu-Sn-S ternary compounds have attracted great attention in the thermoelectric community because they are composed of low-cost, earth-abundant, and non-toxic elements. Among them, Cu7Sn3S10 shows promising thermoelectric performance in the middle temperature range. In this work, through doping Br in Cu7Sn3S10, a peak dimensionless figure of merit (zT) around unity at 750 K has been achieved. Chemical composition analysis indicates that Br has a higher solubility in Cu7Sn3S10 than Cl. On one hand, the Br dopant introduces additional electrons and tunes the initial overhigh carrier concentration to the optimal range. On the other hand, the Br dopant creates strong strain field fluctuation to significantly suppress the lattice thermal conductivity to as low as 0.4 W m(-1) K-1 at 750 K. Its synthetic effects advance the realization of high zT around unity in Br-doped Cu7Sn3S10.

引用

页码：7946 / 7954

页数：9

共 33 条

[1] High thermoelectric figure of merit ZT > 1 in SnS polycrystals [J].

Asfandiyar ;

Cai, Bowen ;

Zhao, Li-Dong ;

Li, Jing-Feng .

JOURNAL OF MATERIOMICS, 2020, 6 (01) :77-85

[2] Low thermal conductivity in ternary Cu4Sn7S16 compound [J].

Bourges, Cedric ;

Lemoine, Pierric ;

Lebedev, Oleg I. ;

Daou, Ramzy ;

Hardy, Vincent ;

Malaman, Bernard ;

Guilmeau, Emmanuel .

ACTA MATERIALIA, 2015, 97 :180-190

[3] EFFECT OF POINT IMPERFECTIONS ON LATTICE THERMAL CONDUCTIVITY [J].

CALLAWAY, J ;

VONBAEYER, HC .

PHYSICAL REVIEW, 1960, 120 (04) :1149-1154

[4] MODEL FOR LATTICE THERMAL CONDUCTIVITY AT LOW TEMPERATURES [J].

CALLAWAY, J .

PHYSICAL REVIEW, 1959, 113 (04) :1046-1051

[5] Significantly optimized thermoelectric properties in high-symmetry cubic Cu7PSe6 compounds via entropy engineering [J].

Chen, Rui ;

Qiu, Pengfei ;

Jiang, Binbin ;

Hu, Ping ;

Zhang, Yiming ;

Yang, Jiong ;

Ren, Dudi ;

Shi, Xun ;

Chen, Lidong .

JOURNAL OF MATERIALS CHEMISTRY A, 2018, 6 (15) :6493-6502

[6] New insights into the structure, chemistry, and properties of Cu4SnS4 [J].

Choudhury, Amitava ;

Mohapatra, Sudip ;

Asl, Hooman Yaghoobnejad ;

Lee, Seng Huat ;

Hor, Yew San ;

Medvedeva, Julia E. ;

McClane, Devon L. ;

Hilmas, Gregory E. ;

McGuire, Michael A. ;

May, Andrew F. ;

Wang, Hsin ;

Dash, Shreeram ;

Welton, Aaron ;

Boolchand, Punit ;

Devlin, Kasey P. ;

Aitken, Jennifer ;

Herbst-Irmer, Regine ;

Petricek, Vaelav .

JOURNAL OF SOLID STATE CHEMISTRY, 2017, 253 :192-201

[7] Discovery of high-performance thermoelectric copper chalcogenide using modified diffusion-couple high-throughput synthesis and automated histogram analysis technique [J].

Deng, Tingting ;

Xing, Tong ;

Brod, Madison K. ;

Sheng, Ye ;

Qiu, Pengfei ;

Veremchuk, Igor ;

Song, Qingfeng ;

Wei, Tian-Ran ;

Yang, Jiong ;

Snyder, G. Jeffrey ;

Grin, Yuri ;

Chen, Lidong ;

Shi, Xun .

ENERGY & ENVIRONMENTAL SCIENCE, 2020, 13 (09) :3041-3053

[8] Thermoelectric properties of non-stoichiometric Cu2+xSn1-xS3 compounds [J].

Deng, Tingting ;

Qiu, Pengfei ;

Song, Qingfeng ;

Chen, Hongyi ;

Wei, Tian-Ran ;

Xi, Lili ;

Shi, Xun ;

Chen, Lidong .

JOURNAL OF APPLIED PHYSICS, 2019, 126 (08)

[9] Thermoelectric properties of n-type Cu4Sn7S16-based compounds [J].

Deng, Tingting ;

Wei, Tian-Ran ;

Song, Qingfeng ;

Xu, Qing ;

Ren, Dudi ;

Qiu, Pengfei ;

Shi, Xun ;

Chen, Lidong .

RSC ADVANCES, 2019, 9 (14) :7826-7832

[10] The effect of order-disorder phase transitions and band gap evolution on the thermoelectric properties of AgCuS nanocrystals [J].

Guin, Satya N. ;

Sanyal, Dirtha ;

Biswas, Kanishka .

CHEMICAL SCIENCE, 2016, 7 (01) :534-543

← 1 2 3 4 →