STRUCTURAL CHARACTERIZATION OF CHEMICALLY BATH DEPOSITED SNS THIN FILMS

被引：0
|
作者：
Ganchev, Maxim [1 ]
Sendova-Vassileva, Marushka [1 ]
Popkirov, Georgi [1 ]
Vitanov, Petko [1 ]
Dimitrov, Dimiter [1 ]
Komsalova, Lilia [1 ]
Lilova, Daniela [2 ]
Gadjov, Ilya [2 ]
机构：
[1] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, 72 Tsarigradsko Shosse Blvd, BU-1784 Sofia, Bulgaria
[2] Univ Chem Technol & Met, 8 Kliment Ohridsky Blvd, BU-1756 Sofia, Bulgaria
来源：
COMPTES RENDUS DE L ACADEMIE BULGARE DES SCIENCES | 2017年 / 70卷 / 03期
关键词：
chemical bath deposition; tin sulfides; thin films; DSC; GROWTH;
D O I：
暂无
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Tin monosulphide (SnS) layers have been successfully deposited on glass substrates covered by TiO2 or ITO using a simple and economic chemical bath deposition method. The effect of annealing on the structure, surface morphology and optical properties were studied to understand the possible ways for achieving an appropriate material for photovoltaic application. Differential scanning calorimetry measurements of residual powder material revealed a region of well defined heat absorption (endothermic process) near 160 degrees C and a weak exothermal reaction at 340 degrees C upon annealing up to 450 degrees C. X-ray diffractometry has shown the presence of monophase material of orthorhombic SnS. Optical investigations of the deposited thin films have shown a band gap near 1.9 eV for allowed direct transitions for samples annealed at 100 degrees C which varies slightly as the temperature of annealing increases up to 260 degrees C. This result is attributed to quantum confinement in the nanocrystalline grains comprising the film. Raman spectra for the annealed thin films indicated presence of SnS2 for the samples annealed at temperatures above 200 degrees C while only tin monosulphide could be identified for lower temperatures.
引用
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页码：357 / 362
页数：8
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