Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N2O)

被引:13
作者
Gudjónsson, G [1 ]
Olafsson, HO [1 ]
Sveinbjörnsson, EO [1 ]
机构
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Microwave Elect Lab, SE-41296 Gothenburg, Sweden
来源
SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 | 2004年 / 457-460卷
关键词
MOSFET; nitrous oxide; interface states; channel mobility;
D O I
10.4028/www.scientific.net/MSF.457-460.1425
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on processing and characterization of lateral n-channel 4H-SiC MOSFETs. We find that growing the gate oxide in N2O ambient results in a significant enhancement of the electron inversion channel mobility. Depending on the processing , conditions the peak field effect mobility varies between 30 and 150 cm(2)/Vs in these normally off devices while transistors with a conventional wet or dry gate oxide exhibit mobilities below 10 cm(2)V/s. The mobility enhancement is correlated with a significant reduction of the density of shallow interface states with energies close to the SiC conduction band edge. This is revealed from capacitance-voltage (C-V) data and thermally stimulated current measurements (TSC) on n-type reference capacitors.
引用
收藏
页码:1425 / 1428
页数:4
相关论文
共 5 条
[1]   Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide [J].
Chung, GY ;
Tin, CC ;
Williams, JR ;
McDonald, K ;
Chanana, RK ;
Weller, RA ;
Pantelides, ST ;
Feldman, LC ;
Holland, OW ;
Das, MK ;
Palmour, JW .
IEEE ELECTRON DEVICE LETTERS, 2001, 22 (04) :176-178
[2]   N2O processing improves the 4H-SiC:SiO2 interface [J].
Lipkin, LA ;
Das, MK ;
Palmour, JW .
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :985-988
[3]  
Olafsson HÖ, 2002, MATER SCI FORUM, V433-4, P547, DOI 10.4028/www.scientific.net/MSF.433-436.547
[4]   New evidence of interfacial oxide traps in n-type 4H-and 6H-SiC MOS structures [J].
Olafsson, HÖ ;
Sveinbjörnsson, EÖ ;
Rudenko, TE ;
Kilchytska, VI ;
Tyagulski, IP ;
Osiyuk, IN .
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :1001-1004
[5]   Enhanced channel mobility of 4H-SiC metal-oxide-semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation [J].
Schörner, R ;
Friedrichs, P ;
Peters, D ;
Stephani, D ;
Dimitrijev, S ;
Jamet, P .
APPLIED PHYSICS LETTERS, 2002, 80 (22) :4253-4255