Spin-dependent CPP transport properties of ZnO/ferromagnet heterostructures

被引：6
|
作者：
Chen, YX [1 ]
Ren, MJ
Ji, G
Fang, J
Chen, JL
Xiao, SQ
Xie, SJ
Liu, YH
Mei, LM
机构：
[1] Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China
[2] Acad Sinica, Inst Plasma Phys, Hefei 230031, Peoples R China
来源：
PHYSICS LETTERS A | 2002年 / 303卷 / 01期
基金：
中国国家自然科学基金;
关键词：
spin-dependent transport; semiconductor oxide; magneto-resistance;
D O I：
10.1016/S0375-9601(02)01204-5
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
(Co/ZnO/FeNi)(2) multilayer heterostructures were fabricated by a multi-target magnetron sputtering system and photolithography. Their spin-dependent CPP (current perpendicular to plane) transport properties were investigated by magneto-transport measurement. An MR ratio of 3.3% is observed at 77 K, which decreased quickly with the increasing of ZnO thickness. No dependence of MR on the magnitude of the measuring current is observed, which indicated the MR is not caused by spin-dependent tunneling. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码：91 / 96
页数：6
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