AlGaAs-GaAs heterostructure δ-doped field-effect transistor (δ-FET)

被引：12

作者：

Chakhnakia, Z ^{[1
]}

Khvedelidze, L ^{[1
]}

Khuchua, N ^{[1
]}

Melkadze, R ^{[1
]}

Peradze, G ^{[1
]}

Sakharova, TB ^{[1
]}

Hatzopoulos, Z ^{[1
]}

机构：

[1] Tbilisi State Univ, Res & Prod Complex Electron Technol, GE-380086 Tbilisi, Georgia

来源：

MICRO- AND NANOELECTRONICS 2003 | 2004年 / 5401卷

关键词：

delta-doped field-effect transistor; molecular beam epitaxy; modeling; simulation; digital and analog applications;

D O I：

10.1117/12.558432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Molecular-beam epitaxy - grown heterostructure field-effect transistors employing a delta-doped channel have been fabricated and investigated. The results of studies of DC parameters of delta-FET's of different configuration can be regarded as the best obtained by other authors for single delta-doped structures These data as well as the results of modeling and simulation allow one to recommend the studied delta-FET's for digital and analog applications.

引用

页码：354 / 361

页数：8

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