High temperature creep behavior of in-situ synthesized MoSi2-30% SiC composite

被引：0
|
作者：
Fu, XW
Yang, WY
Sun, ZQ
Zhang, LQ
Zhu, J
机构：
[1] Univ Sci & Technol, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
[2] Univ Sci & Technol Beijing, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China
[3] Tsing Hua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
来源：
TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA | 2002年 / 12卷 / 04期
关键词：
SiC/MoSi2; composite; in-situ synthesis; creep; dislocation;
D O I：
暂无
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
The compressive creep behavior at 1200 similar to 1400 degreesC of an in-situ synthesized MoSi2-30 % SiC (volume fraction) composite and a traditional PM MoSi2-30 % SiC (volume fraction) composite is investigated. The creep rate of the in-situ synthesized MoSi2-30 % SiC (volume fraction) composite is about 10(-7)s(-1) under stress of 60 similar to 120 MPa, and significantly lower than that made by PM method above 1300degreesC. The reason is that the interface between SiC particle and MoSi2 matrix in in-situ synthesized SiCp/MoSi2 is of direct atomic bonding without any amorphous glassy phase, such as SiO2 structure. Creep deformation occurs primarily by dislocation motion and the dislocations have Burgers vectors of the type of <110> and <100>.
引用
收藏
页码：686 / 690
页数：5
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