Nucleation and Growth of the HfO2 Dielectric Layer for Graphene-Based Devices

被引：41

作者：

Oh, Il-Kwon ^{[1
]}

Tanskanen, Jukka ^{[2
]}

Jung, Hanearl ^{[1
]}

Kim, Kangsik ^{[3
]}

Lee, Mi Jin ^{[3
]}

Lee, Zonghoon ^{[3
]}

Lee, Seoung-Ki ^{[1
]}

Ahn, Jong-Hyun ^{[1
]}

Lee, Chang Wan ^{[1
]}

Kim, Kwanpyo ^{[4
]}

Kim, Hyungjun ^{[1
]}

Lee, Han-Bo-Ram ^{[5
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[2] Univ Eastern Finland, Dept Chem, Joensuu 80101, Finland

[3] UNIST, Sch Mat Sci & Engn, Ulsan 689798, South Korea

[4] UNIST, Dept Phys, Ulsan 689798, South Korea

[5] Incheon Natl Univ, Dept Mat Sci & Engn, Inchon 406840, South Korea

来源：

CHEMISTRY OF MATERIALS | 2015年 / 27卷 / 17期

基金：

新加坡国家研究基金会;

关键词：

ZETA VALENCE QUALITY; GAUSSIAN-BASIS SETS; HIGH-K DIELECTRICS; DEPOSITED AL2O3; ELECTRIC-FIELD; ATOMS LI; IN-SITU; FILMS; OXIDE; TRANSISTORS;

D O I：

10.1021/acs.chemmater.5b01226

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigated nucleation and growth characteristics of atomic layer deposition (ALD) HfO2 on exfoliated and chemical vapor deposition (CVD) graphene by using two Hf precursors, tetrakis(dimethylamino)hafnium (TDMAH) and hafnium tetrachloride (HfCl4). Experimental results and theoretical calculations indicate that HfO2 nucleation is more favorable on CVD graphene than on exfoliated graphene due to the existence of defect sites. Also, the TDMAH precursor showed much more unfavorable nucleation and growth than HfCl4 due to different initial adsorption mechanisms, affecting lower leakage currents and breakdown electric field. ALD growth characteristics of HfO2 will be fundamentally and practically significant for realizing the fabrication of graphene-based electronic devices.

引用

页码：5868 / 5877

页数：10

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