Anodic formation and characterization of nanoporous InP in aqueous KOH electrolytes

被引:39
作者
O'Dwyer, C. [1 ]
Buckley, D. N.
Sutton, D.
Newcomb, S. B.
机构
[1] Univ Limerick, Dept Phys, Limerick, Ireland
[2] Univ Limerick, Mat & Surface Sci Inst, Limerick, Ireland
关键词
D O I
10.1149/1.2354441
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The anodic behavior of highly doped (> 10(18) cm(-3)) n-InP in aqueous KOH was investigated. Electrodes anodized in the absence of light in 2-5 mol dm(-3) KOH at a constant potential of 0.5 - 0.75 V (SCE), or subjected to linear potential sweeps to potentials in this range, were shown to exhibit the formation of a nanoporous subsurface region. Both linear sweep voltammograms and current-time curves at constant potential showed a characteristic anodic peak, corresponding to formation of the nanoporous region. No porous region was formed during anodization in 1 mol dm(-3) KOH. The nanoporous region was examined using transmission electron microscopy and found to have a thickness of some 1 - 3 mu m depending on the anodization conditions and to be located beneath a thin (typically similar to 40 nm), dense, near-surface layer. The pores varied in width from 25 to 75 nm and both the pore width and porous region thickness were found to decrease with increasing KOH concentration. The porosity was approximately 35%. The porous layer structure is shown to form by the localized penetration of surface pits into the InP, and the dense, near-surface layer is consistent with the effect of electron depletion at the surface of the semiconductor. (c) 2006 The Electrochemical Society.
引用
收藏
页码:G1039 / G1046
页数:8
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