300 eV Helium implantation process into tungsten at 300 K has been studied with molecular dynamic simulations (MD). Predicted retention doses were compared to that obtained from experiments performed in equivalent conditions. A saturation phenomenon of the helium retention was evidenced for a number of impinging He atoms and a retention dose similar in both, experiments and simulations. From MD simulations it is learnt that observed Helium diffusion, formation and coalescence of clusters are the phenomena leading to the flaking of the substrate. These processes could explain the saturation of the Helium retention observed experimentally at low energies. (C) 2015 Elsevier B.V. All rights reserved.
机构:
Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USAOak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Barashev, A. V.
Xu, H.
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Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USAOak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Xu, H.
Stoller, R. E.
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Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USAOak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
机构:
Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USAOak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Barashev, A. V.
Xu, H.
论文数: 0引用数: 0
h-index: 0
机构:
Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USAOak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Xu, H.
Stoller, R. E.
论文数: 0引用数: 0
h-index: 0
机构:
Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USAOak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA