Sensitizing effect of Tm3+ on 2.9 mu m emission from Dy3+-doped Ge25Ga5S70 glass

被引:56
作者
Heo, J [1 ]
Cho, WY [1 ]
Chung, WJ [1 ]
机构
[1] POHANG UNIV SCI & TECHNOL,DEPT MAT SCI & ENGN,NON CRYSTALLINE MAT LAB,POHANG,SOUTH KOREA
关键词
D O I
10.1016/S0022-3093(96)00683-7
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Energy transfer mechanisms and the effect of Tm3+ addition on the intensity of the Dy3+:2.9 mu m emission from Ge25Ga5S70 glass were investigated. Intensity of the 2.9 mu m fluorescence from Dy3+ increased with increasing Tm3+ content when the Dy3+ concentration remained constant, which indicates the presence of an efficient energy transfer between Tm3+ and Dy3+. A decrease in the measured lifetimes of the Tm3+:F-3(4) level and a wide spectral overlap between the Tm3+:1.8 mu m emission and the absorption of Dy3+:H-6(15/2)-->H-6(11/2) also supported the proposed energy transfer scheme. Analyses of the emission intensities and decay times suggested that a direct energy transfer from the Tm3+:F-3(4) level to Dy3+:H-6(11/2) level occurred after a fast diffusion-limited migration fo the excitation energy among Tm3+.
引用
收藏
页码:151 / 156
页数:6
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