The effect of dopant concentration on properties of transparent conducting Al-doped ZnO thin films for efficient Cu2ZnSnS4 thin-film solar cells prepared by electrodeposition method

被引:67
作者
Mkawi, E. M. [1 ]
Ibrahim, K. [1 ]
Ali, M. K. M. [1 ]
Farrukh, M. A. [2 ]
Mohamed, A. S. [3 ]
机构
[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, George Town 11800, Malaysia
[2] GC Univ Lahore, Dept Chem, Lahore 54000, Pakistan
[3] Univ Sains Malaysia, Sch Chem Sci, George Town 11800, Malaysia
关键词
Electrochemical deposition; Aluminum-doped ZnO (ZnO:Al) films; Thin film; Electrical and optical properties; ZINC-OXIDE FILMS; LIGHT-EMITTING DEVICES; OPTICAL-PROPERTIES; SPRAY-PYROLYSIS; DEPOSITION; RF; PARAMETERS; MECHANISM;
D O I
10.1007/s13204-015-0400-3
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Al-doped ZnO (AZO) thin films were potentiostatically deposited on indium tin oxide substrates. The influence of the doping level of the ZnO:Al films was investigated. The results of the X-ray diffraction and scanning electron microscopy analysis revealed that the structural properties of the AZO films were found polycrystalline with a hexagonal wurtzite-type structure along the (002) plane. The grain size of the AZO films was observed as approximately 3 mu m in the film doping with 4 mol% ZnO:Al concentration. The thin films also exhibited an optical transmittance as high as 90 % in the wavelength range of 100-1,000 nm. The optical band gap increased from 3.33 to 3.45 eV. Based on the Hall studies, the lowest resistivity (4.78 x 10(-3) Omega cm) was observed in the film doping with 3 mol% ZnO:Al concentration. The sheet resistant, carrier concentration and Hall mobility values were found as 10.78 Omega/square, 9.03 x 10(18) cm(-3) and 22.01 cm(2) /v s, respectively, which showed improvements in the properties of AZO thin films. The ZnO:Al thin films were used as a buffer layer in thin-film solar cells with the structure of soda-lime glass/Mo/Cu2ZnSnS4/ZnS/ZnO/Al grid. The best solar cell efficiency was 2.3 % with V-OC of 0.430 V, J(SC) of 8.24 mA cm(-2) and FF of 68.1 %.
引用
收藏
页码:993 / 1001
页数:9
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