Effect of assistant RF plasma on structure and properties of SiCN thin films prepared by RF magnetron sputtering of SiC target

被引：10

作者：

Li, W. L. ^{[1
]}

Yang, J. L. ^{[1
]}

Zhao, Y. ^{[1
]}

Fei, W. D. ^{[1
]}

机构：

[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2009年 / 482卷 / 1-2期

关键词：

SiCN thin film; Assistant RF plasma; Hardness; Diamond C-C bond; NITRIDE; DEPOSITION; PRESSURE;

D O I：

10.1016/j.jallcom.2009.04.008

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Silicon carbon nitride thin films were deposited on Si(100) substrate at room temperature with different working pressure. The bonding structure and hardness were studied by means of X-ray photoelectron spectroscopy (XPS) and nano-indentation technique. The results showed that the assistant ratio-frequency (RF) plasma had a great effect on the structure and property of the films. The hardness values of the films prepared with assistant RF plasma were higher than those of the films prepared without it. Assisted with RF plasma, sp(3)C-N bond can be found in the film prepared at low working pressure, and the diamond C-C bond can be easily formed in the film prepared at higher working pressure. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：317 / 319

页数：3

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