Development of microstructure In/Pd-doped SnO2 sensor for low-level CO detection

被引：114

作者：

Zhang, Tong ^{[1
]}

Liu, Li ^{[1
,2
]}

Qi, Qi ^{[1
]}

Li, Shouchun ^{[2
]}

Lu, Geyu ^{[1
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

[2] Jilin Univ, Coll Phys, Changchun 130012, Peoples R China

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2009年 / 139卷 / 02期

基金：

中国国家自然科学基金;

关键词：

SnO2; CO; Microstructure; Gas sensor; GAS-SENSING PROPERTIES; THIN-FILM; NANOPARTICLES; ETHANOL; SENSITIVITY; SELECTIVITY; FABRICATION; ELECTRODE; LPG;

D O I：

10.1016/j.snb.2009.03.036

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In/Pd-doped SnO2 is synthesized via a sol-gel method and coated on a silicon substrate with Pt electrodes to fabricate a microstructure sensor. The sensor shows high response to CO with very low cross response to common interference gases at ail operating temperature of 140 degrees C. Especially, the sensor can detect CO down to 1 ppm (the response value is about 3), and the response time and recovery time are about 15 and 20s, respectively. These results make our sensor a good candidate in practical CO sensors. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：287 / 291

页数：5