Diode-pumped passively mode-locked Nd:LuVO4 laser with LT-In0.25Ga0.75As saturable absorber

被引：18
作者：
Li, T. [1 ]
Zhao, S. [1 ]
Li, Y. [1 ]
Zhuo, Z. [1 ]
Yang, K. [1 ]
Li, G. [1 ]
Li, D. [1 ]
Yu, Z. [2 ]
机构：
[1] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China
[2] Shandon Bright Optron Inc, Jinan 250100, Peoples R China
来源：
LASER PHYSICS LETTERS | 2009年 / 6卷 / 05期
关键词：
diode-pumped lasers; Nd:LuVO4 crystal; mode locked laser; ND-LUVO4; LASER; HIGH-POWER; CONTINUOUS-WAVE; LOCKING; MIRROR; REFLECTOR; ND-GDVO4;
D O I：
10.1002/lapl.200910003
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A diode pumped passively mode-locked Nd:LuVO4 laser with a low temperature (J) In0.25Ga0.75As absorber is realized in this paper. An In0.25Ga0.75. As single-quantum-well absorber, which is grown by use of the metal-organic chemical-vapor deposition technique, acts as nonlinear absorber and output coupler simultaneously. A special cavity is designed to keep the power density on In0.25Ga0.75As under its damage threshold. Both the Q-switched and continuous-wave (cw) mode locking operation are experimentally realized. An average output power of 5.9 W with pulse width of 4.9 ps is achieved at the pump power of 22 W, corresponding to an optical conversion efficiency of 26.8%.
引用
收藏
页码：370 / 373
页数：4
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