Interlayer exchange coupling in Fe/MgO/Fe magnetic tunnel junctions

被引:122
作者
Katayama, T. [1 ]
Yuasa, S.
Velev, J.
Zhuravlev, M. Ye.
Jaswal, S. S.
Tsymbal, E. Y.
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[2] Univ Nebraska, Dept Phys, Lincoln, NE 68588 USA
基金
美国国家科学基金会;
关键词
ROOM-TEMPERATURE; MAGNETORESISTANCE; BARRIER; LAYERS; MGO;
D O I
10.1063/1.2349321
中图分类号
O59 [应用物理学];
学科分类号
摘要
Interlayer exchange coupling (IEC) in fully epitaxial Fe/MgO/Fe(001) tunnel junctions with wedge-shaped MgO layers is measured at room temperature from the unidirectional shift of the Kerr hysteresis loop. It is found that the IEC is antiferromagnetic for small MgO thickness but changes sign at 0.8 nm. Ab initio calculations of IEC show that this behavior can be explained by the presence of O vacancies in the MgO barrier which makes IEC antiferromagnetic for thin barriers. With increasing MgO thickness the resonance contribution to IEC from localized defect states is reduced resulting in the ferromagnetic coupling typical for perfect MgO barriers. (c) 2006 American Institute of Physics.
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页数:3
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