Annealing temperature effect on field emission of silicon emitter arrays with sol-gel (Ba0.65Sr0.35)TiO3 coatings

被引：4

作者：

Lu, H.

Chen, F.

Zhu, W. G.

Pan, J. S.

Tan, O. K.

机构：

[1] Nanyang Technol Univ, Ctr Microelect, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

FERROELECTRICS | 2006年 / 334卷

关键词：

BST thin film; electron emission; sol-gel;

D O I：

10.1080/00150190600695941

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ba0.65Sr0.35TiO3 (BST) thin films have been fabricated on silicon field emitter arrays (FEAs) using sol-gel coating for electron emission applications. The BSTcoatings exhibit the perovskite structure when annealed between 650 and 700 degrees C, and an interfacial reaction occurs when annealed above 750 degrees C The threshold electric field is lowered from 36 V/mu m for bare silicon tips to 19 V/mu m for BST-coated silicon tips. The oxygen vacancy concentration increases for BST thin films annealed from 600 to 750 degrees C, and decreases above 750 degrees C, leading to the Fermi energy shift. The electron emission behavior is correlated to both the microstructure and electronic structure of the BST thin films.

引用

页码：253 / 261

页数：9