Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor

被引：36
|
作者：
Bai, S [1 ]
Wagner, G
Shishkin, E
Choyke, WJ
Devaty, RP
Zhang, M
Pirouz, P
Kimoto, T
机构：
[1] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA
[2] Inst Kristallzuchtung, Berlin, Germany
[3] Case Western Reserve Univ, Cleveland, OH 44106 USA
[4] Kyoto Univ, Kyoto, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷
关键词：
hot-wall CVD; photoluminescence; polytypes; stacking faults;
D O I：
10.4028/www.scientific.net/MSF.389-393.589
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Eight intrinsic exciton spectra with band gaps ranging from 3.03 to 2.672 eV are found due to embedded in 4H SiC homoepitaxial films grown in hot-wall reactors. A correlation is found between the appearance of these embedded spectra and reduced lifetime as well as electron microscopic evidence for stacking faults.
引用
收藏
页码：589 / 592
页数：4
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