Reaction constants for main cationic native defects in narrow-gap Hg1-xCdxTe crystals

被引：6
作者：
Bogoboyashchyy, VV
Kurbanov, KR
机构：
[1] Kremenchuk State Polytech Univ, UA-39614 Kremenchuk, Ukraine
[2] Inst Econ & New Technol, UA-39614 Kremenchuk, Ukraine
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2004年 / 371卷 / 1-2期
关键词：
semiconductors; point defects;
D O I：
10.1016/j.jallcom.2003.06.010
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The equilibrium defect structure of Hg1-xCdxTe crystals and the diffusion of mercury in this material have been investigated. The results are presented. The results were obtained by using an optical method for free carrier concentration measurements at T approximate to 300 K. A new model for mercury diffusion was used. taking into account the effect of charged defect electric drift. As result, a consistent system of reaction constants for mercury vacancies and the mercury interstitials in H1-xCdxTe crystals has been obtained. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：97 / 99
页数：3
相关论文
共 12 条
[1]   1ST PRINCIPLES CALCULATION OF NATIVE DEFECT DENSITIES IN HG0.8CD0.2TE [J].
BERDING, MA ;
VANSCHILFGAARDE, M ;
SHER, A .
PHYSICAL REVIEW B, 1994, 50 (03) :1519-1534
[2]  
BOGOBOYASHCHII VV, 1985, SOV PHYS SEMICOND+, V19, P505
[3]  
BOGOBOYASHCHII VV, 1987, SOV PHYS SEMICOND+, V21, P888
[4]   Special features of hopping conduction in p-Hg0.78Cd0.22Te crystals under conditions of dual doping [J].
Bogoboyashchii, VV .
SEMICONDUCTORS, 2002, 36 (01) :26-33
[5]  
Bogoboyashchiy V., 1997, P SOC PHOTO-OPT INS, V3486, P325
[6]  
BOGOBOYASHCHIY VV, 2001, FUNCTIONAL MAT, V8, P280
[7]  
Bogoboyashchyy V. V., 2003, Semiconductor Physics Quantum Electronics & Optoelectronics, V6, P47
[8]  
ELIZAROV AI, 1990, FIZ TEKH POLUPROV, V24, P446
[9]   Derivation of an analytical model to calculate junction depth in HgCdTe photodiodes [J].
Holander-Gleixner, S ;
Robinson, HG ;
Helms, CR .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (03) :1299-1304
[10]   THE EFFECT OF LOW-TEMPERATURE ANNEALING ON DEFECTS, IMPURITIES, AND ELECTRICAL-PROPERTIES OF (HG,CD)TE [J].
SCHAAKE, HF ;
TREGILGAS, JH ;
BECK, JD ;
KINCH, MA ;
GNADE, BE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :143-149
12