Polarized emission characteristics of UV-LED with subwavelength grating

被引：10

作者：

Takashima, Yuusuke ^{[1
]}

Shimizu, Ryo ^{[1
]}

Haraguchi, Masanobu ^{[1
,2
]}

Naoi, Yoshiki ^{[1
,2
]}

机构：

[1] Univ Tokushima, Grad Sch Adv Technol & Sci, Tokushima 7708506, Japan

[2] Univ Tokushima, Inst Sci & Technol, Tokushima 7708506, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 07期

基金：

日本学术振兴会;

关键词：

SAPPHIRE SUBSTRATE; AL0.17GA0.83N FILM; GRID POLARIZERS; LAYER; LIGHT; REFLECTORS; DEPOSITION;

D O I：

10.7567/JJAP.53.072101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated polarized emission from a GaN-based ultraviolet light-emitting diode (UV-LED) with a subwavelength grating (SWG) on the surface. The electroluminescence (EL) spectra showed that the UV-LED exhibits high polarization selectivity, as high as s-polarization : p-polarization = 4 : 1 at a wavelength of 360 nm. The polarized EL characteristics were discussed by the theoretical consideration of Bloch modes resulting from the spatial periodicity of the refractive index in the SWG region and also by finite difference time domain calculations to explore the electromagnetic field. We succeeded in demonstrating the feasibility of a highly polarized UV-LED grown on c-plane sapphire. (C) 2014 The Japan Society of Applied Physics

引用

页数：6

共 29 条

[1] Optical constants of epitaxial AlGaN films and their temperature dependence [J].

Brunner, D ;

Angerer, H ;

Bustarret, E ;

Freudenberg, F ;

Hopler, R ;

Dimitrov, R ;

Ambacher, O ;

Stutzmann, M .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) :5090-5096

[2] High-contrast gratings as a new platform for integrated optoelectronics [J].

Chang-Hasnain, Connie J. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (01)

[3] 1550 nm high contrast grating VCSEL [J].

Chase, Christopher ;

Rao, Yi ;

Hofmann, Werner ;

Chang-Hasnain, Connie J. .

OPTICS EXPRESS, 2010, 18 (15) :15461-15466

[4] Photo-alignment of low-molecular mass nematic liquid crystals on photoreactive polyimide and polymethacrylate film by irradiation of a linearly polarized UV light [J].

Choi, DH ;

Cha, YK .

POLYMER BULLETIN, 2002, 48 (4-5) :373-380

[5] SUBWAVELENGTH AMORPHOUS-SILICON TRANSMISSION GRATINGS AND APPLICATIONS IN POLARIZERS AND WAVEPLATES [J].

CHOU, SY ;

DENG, WY .

APPLIED PHYSICS LETTERS, 1995, 67 (06) :742-744

[6] Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes [J].

Gardner, NF ;

Kim, JC ;

Wierer, JJ ;

Shen, YC ;

Krames, MR .

APPLIED PHYSICS LETTERS, 2005, 86 (11) :1-3

[7] Photoconduction studies on GaN nanowire transistors under UV and polarized UV illumination [J].

Han, S ;

Jin, W ;

Zhang, DH ;

Tang, T ;

Li, C ;

Liu, XL ;

Liu, ZQ ;

Lei, B ;

Zhou, CW .

CHEMICAL PHYSICS LETTERS, 2004, 389 (1-3) :176-180

[8] Optical absorption properties of Mg-doped GaN nanocolumns [J].

Iwanaga, T ;

Suzuki, T ;

Yagi, S ;

Motooka, T .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (10)

[9] Design and Fabrication of Bilayer Wire Grid Polarizer Using Ultraviolet Replicated Nanograting against Nickel Electroformed Nanostamp [J].

Ju, Jonghyun ;

Han, Yun-ah ;

Kim, Jwasun ;

Byeon, Euihyeon ;

Kim, Seok-min ;

Lee, Yong-ho ;

Hwangbo, Chang Kwon .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (10)

[10] Inverse polarizing effect of subwavelength metallic gratings in deep ultraviolet band [J].

Kang, Guo G. ;

Vartiainen, Ismo ;

Bai, Ben F. ;

Tuovinen, Hemmo ;

Turunen, Jari .

APPLIED PHYSICS LETTERS, 2011, 99 (07)

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