Structured ZnO thin films grown by chemical bath deposition for photovoltaic applications
被引:63
作者:
Drici, A
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机构:LPSE, FSTN, F-44322 Nantes 3, France
Drici, A
Djeteli, G
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机构:LPSE, FSTN, F-44322 Nantes 3, France
Djeteli, G
Tchangbedji, G
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机构:LPSE, FSTN, F-44322 Nantes 3, France
Tchangbedji, G
Derouiche, H
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机构:LPSE, FSTN, F-44322 Nantes 3, France
Derouiche, H
Jondo, K
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机构:LPSE, FSTN, F-44322 Nantes 3, France
Jondo, K
Napo, K
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机构:LPSE, FSTN, F-44322 Nantes 3, France
Napo, K
Bernède, JC
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机构:LPSE, FSTN, F-44322 Nantes 3, France
Bernède, JC
Ouro-Djobo, S
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机构:LPSE, FSTN, F-44322 Nantes 3, France
Ouro-Djobo, S
Gbagba, M
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机构:LPSE, FSTN, F-44322 Nantes 3, France
Gbagba, M
机构:
[1] LPSE, FSTN, F-44322 Nantes 3, France
[2] Univ Lome, Lome, Togo
来源:
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
2004年
/
201卷
/
07期
关键词:
D O I:
10.1002/pssa.200306806
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
ZnO thin films have been deposited by chemical bath deposition (CBD-ZnO). The deposition conditions, i.e. the pH and the temperature of the bath, have been adjusted to achieve the deposition of porous, but adherent, thin films. After annealing in air half an hour at 300degreesC ZnO films crystallized in the hexagonal structure are obtained. They are nearly stoichiometric with a slight oxygen deficiency. The films are porous and the grains are columnar, which allows achieving films with large surface area. The films are semi-conductor with a n-type conductivity. It is shown that the grain boundary influence on the conductivity is stronger in longitudinal than in transversal structures. In the latter case the barrier height is nearly homogeneous. Such films deposited on ITO have been used in micro-structured solar cells with configuration ITO/ZnO/absorbent/aluminum. The absorbent used was an organic layer of zinc-phthalocyanine or a blend of poly(N-vinylcarbazole):diaminoanthraquinone. A photovoltaic effect has been achieved. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
机构:
Shandong Univ, Inst Optoelect Mat & Devices, Jinan 250100, Peoples R ChinaShandong Univ, Inst Optoelect Mat & Devices, Jinan 250100, Peoples R China
Ma, J
Ji, F
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机构:Shandong Univ, Inst Optoelect Mat & Devices, Jinan 250100, Peoples R China
Ji, F
Zhang, DH
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机构:Shandong Univ, Inst Optoelect Mat & Devices, Jinan 250100, Peoples R China
Zhang, DH
Ma, HL
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机构:Shandong Univ, Inst Optoelect Mat & Devices, Jinan 250100, Peoples R China
Ma, HL
Li, SY
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机构:Shandong Univ, Inst Optoelect Mat & Devices, Jinan 250100, Peoples R China
机构:
Shandong Univ, Inst Optoelect Mat & Devices, Jinan 250100, Peoples R ChinaShandong Univ, Inst Optoelect Mat & Devices, Jinan 250100, Peoples R China
Ma, J
Ji, F
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机构:Shandong Univ, Inst Optoelect Mat & Devices, Jinan 250100, Peoples R China
Ji, F
Zhang, DH
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机构:Shandong Univ, Inst Optoelect Mat & Devices, Jinan 250100, Peoples R China
Zhang, DH
Ma, HL
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机构:Shandong Univ, Inst Optoelect Mat & Devices, Jinan 250100, Peoples R China
Ma, HL
Li, SY
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机构:Shandong Univ, Inst Optoelect Mat & Devices, Jinan 250100, Peoples R China