Recording of cell action potentials with AlGaN/GaN field-effect transistors (vol 86, pg 033901, 2005)

被引：2

作者：

Steinhoff, Georg

Baur, Barbara

Wrobel, Guenter

Ingebrandt, Sven

Offenhaeusser, Andreas

Dadgar, Armin

Krost, Alois

Stutzmann, Martin

Eickhoff, Martin

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[2] Forschungszentrum Julich, Inst Schichten & Grenzflachen ISG 2, D-52428 Julich, Germany

[3] Otto Von Guericke Univ, D-39016 Magdeburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 01期

关键词：

D O I：

10.1063/1.2219129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页数：1

共 3 条

[1] Flicker noise in GaN/Al0.15Ga0.85N doped channel heterostructure field effect transistors [J].

Balandin, A ;

Cai, S ;

Li, R ;

Wang, KL ;

Rao, VR ;

Viswanathan, CR .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (12) :475-477

[2] Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors [J].

Garrido, JA ;

Foutz, BE ;

Smart, JA ;

Shealy, JR ;

Murphy, MJ ;

Schaff, WJ ;

Eastman, LF ;

Muñoz, E .

APPLIED PHYSICS LETTERS, 2000, 76 (23) :3442-3444

[3] Recording of cell action potentials with AlGaN/GaN field-effect transistors -: art. no. 033901 [J].

Steinhoff, G ;

Baur, B ;

Wrobel, G ;

Ingebrandt, S ;

Offenhäusser, A ;

Dadgar, A ;

Krost, A ;

Stutzmann, M ;

Eickhoff, M .

APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3

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