In2S3 nanocrystalline films are prepared on glass substrates by the spray pyrolysis technique using indium chloride and thiourea as precursors. The deposition is carried out at 350 degrees C on glass substrates. The films are then annealed for two hour at 200, 400, 600, and 800 degrees C in O-2 flow. These results indicate that the In2O3 film prepared by this simple thermal oxidation method is a promising candidate for electro-optical and photovoltaic devices.