p-Type NiO Hybrid Visible Photodetector

被引:46
作者
Mallows, John [1 ]
Planells, Miguel [1 ]
Thakare, Vishal [2 ]
Bhosale, Reshma [2 ]
Ogale, Satishchandra [2 ,3 ,4 ]
Robertson, Neil [1 ]
机构
[1] Univ Edinburgh, Sch Chem, Edinburgh EH9 3FJ, Midlothian, Scotland
[2] CSIR Natl Chem Lab, Pune 411008, Maharashtra, India
[3] Indian Inst Sci Educ & Res, Dept Phys, Pune 411008, Maharashtra, India
[4] Indian Inst Sci Educ & Res, Ctr Energy Sci, Pune 411008, Maharashtra, India
基金
英国工程与自然科学研究理事会;
关键词
photodetector; nickel oxide; organic; surface modifier; oxygen vacancies; pulsed laser deposition; NICKEL-OXIDE; DIELECTRIC-PROPERTIES; PHOTODIODE; POLYMER; LAYER;
D O I
10.1021/acsami.5b09291
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A novel hybrid visible-light photodetector was created using a planar p-type inorganic NiO layer in a junction with an organic electron acceptor layer. The effect of different oxygen pressures on formation of the NiO layer by pulsed laser deposition shows that higher pressure increases the charge carrier density of the film and lowers the dark current in the device. The addition of a monolayer of small molecules containing conjugated pi systems and carboxyl groups at the device interface was also investigated and with correct alignment of the energy levels improves the device performance with respect to the quantum efficiency, responsivity, and photogeneration. The thickness of the Organic layer was also optimized for the device, giving a responsivity of 1.54 X 10(-2) A W-1 in 460 nm light.
引用
收藏
页码:27597 / 27601
页数:5
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