Modulation of PL recombination processes in N doped GaAs/Al0.33Ga0.67As SQW by electric field

Radiative recombination rate of excitons bound to nitrogen atom pairs in the AlGa-As/GaAs single quantum wells is investigated by comparing the recombination process between the quantized levels by using nitrogen atomic layer doped samples. When the nitrogen-doped layer is located at the center of the well, photoluminescence due to the quantized levels almost vanishes. The quantum well photoluminescence appears when the nitrogen-doped layer is shifted from the center of the well toward the heterojunction. It is found that the recombination process can be relatively modulated by changing the spatial distance of the nitrogen-doped layer from the heterojunction or, by applying an electric field in the direction perpendicular to the well.