Modulation of PL recombination processes in N doped GaAs/Al0.33Ga0.67As SQW by electric field

被引:0
|
作者
Onomitsu, K
Kawaharazuka, A
Okabe, T
Makimoto, T
Saito, H
Horikoshi, Y
机构
[1] Waseda Univ, Sch Sci & Engn, Dept Elect Elect & Comp Engn, Shinjuku Ku, Tokyo 1698555, Japan
[2] Waseda Univ, Kagami Mem Lab Mat Sci & Technol, Shinjuku Ku, Tokyo 1690051, Japan
[3] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430124, Japan
来源
COMPOUND SEMICONDUCTORS 2001 | 2002年 / 170期
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D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Radiative recombination rate of excitons bound to nitrogen atom pairs in the AlGa-As/GaAs single quantum wells is investigated by comparing the recombination process between the quantized levels by using nitrogen atomic layer doped samples. When the nitrogen-doped layer is located at the center of the well, photoluminescence due to the quantized levels almost vanishes. The quantum well photoluminescence appears when the nitrogen-doped layer is shifted from the center of the well toward the heterojunction. It is found that the recombination process can be relatively modulated by changing the spatial distance of the nitrogen-doped layer from the heterojunction or, by applying an electric field in the direction perpendicular to the well.
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页码:407 / 411
页数:5
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