Study on thermal stability and mechanical properties of nanocomposite Zr-W-B-N thin films

被引:7
作者
Dubey, P. [1 ,2 ]
Arya, V. [1 ]
Srivastava, S. [3 ]
Singh, D. [2 ]
Chandra, R. [1 ]
机构
[1] Indian Inst Technol Roorkee, Inst Instrumentat Ctr, Nano Sci Lab, Roorkee 247667, Uttar Pradesh, India
[2] Indian Inst Technol Roorkee, Met & Mat Engn Dept, Roorkee 247667, Uttar Pradesh, India
[3] DBS PG Coll, Dept Phys, Dehra Dun, Uttar Pradesh, India
关键词
Zr-W-B-N coating; Magnetron sputtering; Thermal stability; Mechanical properties; BORON-NITRIDE FILMS; SPUTTER-DEPOSITION; SUPERHARD COATINGS; HARD COATINGS; DESIGN; SYSTEM; COMPOSITES; RESISTANCE; BEHAVIOR;
D O I
10.1016/j.surfcoat.2015.07.076
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The effect of microstructure on thermal stability and mechanical properties of co-sputtered deposited Zr-W-B-N thin films on Si (100) substrates have been studied in detail. The power density of boron target has been varied from 0.1 to 7.5 W/cm(2) to obtained films of varying microstructure. Electron microscopy, X-ray diffraction analysis, atomic force microscopy, Raman scattering spectra, nano and micro indentations were used to investigate the interrelations between the microstructure and the variations in strength properties of nanocomposite Zr-W-BN thin films. It has been observed that films with boron content <2.3 at.% exhibited (200) preferred crystallographic orientation of grains and columnar structure. While the films of boron content 7.5 at.% are columnarless with crystal phase grain size less than 7 nm and of amorphous-crystalline structure. The film with-boron concentration similar to 7.5 at.% exhibits maximum hardness (similar to 37 GPa), wear resistance (H/E-r similar to 0.24) and fracture toughness (2.9 MPa.m(1/2)). Post annealing of the film with similar to 7.5 at% boron concentration has been carried out in vacuum (T-v) and air (T-n) up to 900 degrees C. Zr-W-B(7.5 at%)-N film retains its fcc structure during vacuum annealing up to 900 degrees C. Oxygen starts to incorporate at T-n = 500 degrees C and its percentage goes up with increasing Tn up to 900 degrees C. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:173 / 181
页数:9
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