Printed flexible thin-film transistors based on different types of modified liquid metal with good mobility

被引:14
作者
Li, Qian [1 ,2 ]
Lin, Ju [3 ]
Liu, Tianying [1 ,2 ,4 ]
Zheng, Han [5 ]
Liu, Jing [1 ,2 ,3 ]
机构
[1] Chinese Acad Sci, Tech Inst Phys & Chem, Beijing Key Lab Cryo Biomed Engn, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Cryogen, Beijing 100190, Peoples R China
[3] Tsinghua Univ, Sch Med, Dept Biomed Engn, Beijing 100084, Peoples R China
[4] Univ Chinese Acad Sci, Sch Engn Sci, Beijing 100190, Peoples R China
[5] Beijing DREAM Ink Technol Co Ltd, Beijing 100080, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
liquid metal; carbon nanotube; field-effect transistors; printed devices; carrier mobility; CARBON NANOTUBE TRANSISTORS; HIGH-PERFORMANCE; INTEGRATED-CIRCUITS; COMPLEMENTARY CIRCUITS; CONTACT RESISTANCE; THRESHOLD VOLTAGE; HIGH-SPEED; SEMICONDUCTORS; ELECTRONICS; FABRICATION;
D O I
10.1007/s11432-019-9918-4
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
High-performance logic circuits fabricated on flexible or unconventional substrates have become a necessity for several new applications. Generally, compared to those fabricated on more rigid substrates, printed, large-area, and flexible thin film transistors (TFTs) are prone to under-performance, which severely limits their practical value. The realization of printed flexible macroelectronics requires advancements in material science and novel fabricating techniques. In this study, using a fast printing process, we manufacture liquid metal-carbon nanotube TFTs on a thin polyethylene terephthalate substrate. These flexible TFTs (p-type) exhibit enhance stability and flexibility, carrier mobility (10.61 cm(2)V(-1)s(-1)), and transconductance (0.88 mu S). Furthermore, we realize dependable n-type and ambipolar transistors based on liquid metals with charge transport efficiencies that are comparable to our p-type counterparts, thus providing a foundation for manufacturing integrated circuits and complementary logic gates on flexible substrates. This study shows the positive progress of liquid metal printing-enabled functional devices and discusses the possibility of practical applications; moreover, it sets the foundation for printed high-performance and large-area flexible liquid metal electronics.
引用
收藏
页数:12
相关论文
共 62 条
[1]   Organic semiconductors for solution-processable field-effect transistors (OFETs) [J].
Allard, Sybille ;
Forster, Michael ;
Souharce, Benjamin ;
Thiem, Heiko ;
Scherf, Ullrich .
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2008, 47 (22) :4070-4098
[2]   Patterned Liquid Metal Contacts for Printed Carbon Nanotube Transistors [J].
Andrews, Joseph B. ;
Mondal, Kunal ;
Neumann, Taylor V. ;
Cardenas, Jorge A. ;
Wang, Justin ;
Parekh, Dishit P. ;
Lin, Yiliang ;
Ballentine, Peter ;
Dickey, Michael D. ;
Franklin, Aaron D. .
ACS NANO, 2018, 12 (06) :5482-5488
[3]   Contact Resistance and Megahertz Operation of Aggressively Scaled Organic Transistors [J].
Ante, Frederik ;
Kaelblein, Daniel ;
Zaki, Tarek ;
Zschieschang, Ute ;
Takimiya, Kazuo ;
Ikeda, Masaaki ;
Sekitani, Tsuyoshi ;
Someya, Takao ;
Burghartz, Joachim N. ;
Kern, Klaus ;
Klauk, Hagen .
SMALL, 2012, 8 (01) :73-79
[4]   Improving Contact Interfaces in Fully Printed Carbon Nanotube Thin-Film Transistors [J].
Cao, Changyong ;
Andrews, Joseph B. ;
Kumar, Abhinay ;
Franklin, Aaron D. .
ACS NANO, 2016, 10 (05) :5221-5229
[5]   Gate capacitance coupling of singled-walled carbon nanotube thin-film transistors [J].
Cao, Qing ;
Xia, Minggang ;
Kocabas, Coskun ;
Shim, Moonsub ;
Rogers, John A. ;
Rotkin, Slava V. .
APPLIED PHYSICS LETTERS, 2007, 90 (02)
[6]   Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors [J].
Chen, Haitian ;
Cao, Yu ;
Zhang, Jialu ;
Zhou, Chongwu .
NATURE COMMUNICATIONS, 2014, 5
[7]   Capacitively Coupled Hybrid Ion Gel and Carbon Nanotube Thin-Film Transistors for Low Voltage Flexible Logic Circuits [J].
Choi, Yongsuk ;
Kang, Joohoon ;
Secor, Ethan B. ;
Sun, Jia ;
Kim, Hyoungjun ;
Lim, Jung Ah ;
Kang, Moon Sung ;
Hersam, Mark C. ;
Cho, Jeong Ho .
ADVANCED FUNCTIONAL MATERIALS, 2018, 28 (34)
[8]   Highly Stretchable Transistors Using a Microcracked Organic Semiconductor [J].
Chortos, Alex ;
Lim, Josh ;
To, John W. F. ;
Vosgueritchian, Michael ;
Dusseault, Thomas J. ;
Kim, Tae-Ho ;
Hwang, Sungwoo ;
Bao, Zhenan .
ADVANCED MATERIALS, 2014, 26 (25) :4253-4259
[9]  
Chun KY, 2010, NAT NANOTECHNOL, V5, P853, DOI [10.1038/nnano.2010.232, 10.1038/NNANO.2010.232]
[10]   Interface Engineering: An Effective Approach toward High-Performance Organic Field-Effect Transistors [J].
Di, Chong-An ;
Liu, Yunqi ;
Yu, Gui ;
Zhu, Daoben .
ACCOUNTS OF CHEMICAL RESEARCH, 2009, 42 (10) :1573-1583